Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga_2O_3 as a Novel Mask Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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原 一広
「応用物理」編集委員会
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Hirose Shingo
Mechanical Engineering Laboratory Aist Miti
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Hara K
Synthetic Crystal Research Laboratory Faculty Of Engineering Nagoya University
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Hara Kunihiro
Opto-electronics Research Laboratories Nec Corporation
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MUNEKATA Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Hara K
Tokyo Inst. Technol. Yokohama Jpn
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Hara Kazuhiko
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Hirose S
Yamagata Univ. Yamagata Jpn
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YOSHIDA Akihiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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YAMAURA Masaaki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Munekata H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yamaura M
Saga Univ. Saga Jpn
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Yamaura Masaaki
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yoshida Akihiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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HARA Kazuhiro
Department of Applied Science, Faculty of Engineering Kyushu University
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