Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_<1-x>:H (x〜0.2)
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概要
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Photoluminescence of o-Si.C.-.: II (x -0.2) prepared by glow-dischargedecomposition or tetramethylsilane is studied systematically in the picosecondtime region by using tunable picosecond light jculses. At room temperaturephoto-generated electrons and holes are radiatively recombined at a rate of- 5.5 x 10' s ' and non-radiatively recombined competitively depending on thesubstrate temperature under the sample deposition. From the energy dependenceof the lifetime of photo-generated electrons and holes, it is indicated that theoptical matrix element of the radiative recombination transition is energy-in-dependent. This fact and the quite fast radiative recombination ratc are attributedto the geminate (i.e. exciton-like) radiative recombination mechanism of photo-generated electron-hole pairs which are well localized at the excited position.
- 社団法人日本物理学会の論文
- 1983-11-15
著者
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Shionoya Shigeo
The Institute for Solid State Physics, The University of Tokyo
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MASUMOTO Yasuaki
The Institute for Solid State Physics,The University of Tokyo
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MUNEKATA Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Shionoya Shigeo
The Institute For Solid State Physics The University Of Tokyo
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Masumoto Yasuaki
The Institute For Solid State Physics The University Of Tokyo
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Munekata H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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MUNEKATA Hiro
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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