Capture Processes of Excitons and Free Carriers by Shallow Donor-Acceptor Pairs in CdS
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概要
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Capture processes of excitons and free carriers by shallow donor-acceptor pairs in CdS are investigated by observing the characteristics of the edge emission produced by such pairs. Using CdS0.995Se0.005:Li crystals, the observation is made at 4.2 K by two types of excitation, one with the 488.0 nm laser light corresponding to the direct creation of A excitons and the other with the 476.5 nm laser light corresponding to the free carrier generation. There are clear differences between the two types of excitation in peak shifts with excitation intensity and during decay, and further in the manners of decay. It is concluded that excitons cannot be captured by pairs with intrapair separations larger than 2.8 times the exciton Bohr radius, while free carriers are captured by any pairs with separations larger than 1.3 times the donor electron Bohr radius.
- 社団法人日本物理学会の論文
- 1975-03-15
著者
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Shionoya Shigeo
The Institute For Solid State Physics The University Of Tokyo
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Fukushima Toshio
The Institute For Solid State Physics The University Of Tokyo
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SHINOYA Shigeo
The Institute for Solid State Physics, The University of Tokyo
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Shinoya Shigeo
The Institute For Solid State Physics The University Of Tokyo
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