Two Types of Luminescence Transitions in CdS Involving Te Isoelectronic Traps
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概要
- 論文の詳細を見る
Luminescence due to Te isoelectronic traps in CdS is found to be caused by two types of transitions. Using CdS_<0.995>Se_<0.005> : Li, Te crystals, luminescence features are measured at 4.2 K by two types of excitation, one with the 488.0 nm laser light corresponding to the direct creation of A-excitons, and the other with the 476.5 nm Baser light corresponding to interband excitation. Under A-exciton excitation only the emission band peaked at 2.10 eV due to Te-bound excitons is produced, which is characterized by an exponential decay. Under interband excitation, a new emission band peaked at 2.07 eV is observed to appear in addition to the bound exciton band. This band is characterized by a slow non-exponential decay obeying the power law, and is ascribed to the pair-type transition between holes captured at Te traps and electrons located at distant donors.
- 社団法人応用物理学会の論文
- 1976-05-05
著者
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Shionoya Shigeo
The Institute For Solid State Physics The University Of Tokyo
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FUKUSHIMA Toshio
The Institute for Solid State Physics, The University of Tokyo
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Fukushima Toshio
The Institute For Solid State Physics The University Of Tokyo
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