Vapor Reaction Growth of SnO_2 Single Crystals and Their Properties
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概要
- 論文の詳細を見る
In order to obtain single crystals of SnO_2 which can be used for the investigation of the intrinsic electrical and other related properties, crystal growth by the method using the vapor reaction of SnCl_4 with H_2O was attempted, and was successfully performed. Colorless transparent single crystals with sizes up to 2×5×15 mm could be obtained by 24 hr run at 1300℃. The measurements of crystallographic properties, optical transmission, electrical conductivity and Hall effect were carried out with the grown single crystals. The crystals were found to be twins having {011} twinning plane. It was shown that the crystal is a typical n-type broad-band semiconductor having the value of the conductivity of a few Ω^<-1>・cm^<-1> and the mobility of about 200 cm^2・volt^<-1>・sec^<-1> at room temperature. The mobility of the crystals was found to change by the equation μ∝T^<-2> above 250°K.
- 社団法人応用物理学会の論文
- 1965-03-15
著者
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Shionoya Shigeo
The Institute For Solid State Physics The University Of Tokyo
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Makishima Shoji
The Institute For Solid State Physics The University Of Tokyo
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NAGASAWA Masahiro
The Institute for Solid State Physics The University of Tokyo
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