Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures

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概要

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• Absorption saturation of the lowest excitons under the high density excitation isstudied in GaAs-AIAs multi-quantum-well structures. Saturation characteristicsremarkably depend on the well layer thickness ranging from 53A to l54A. Thesesaturation characteristics and possible mechanisms are discussed.

• 社団法人日本物理学会の論文
• 1986-01-15

著者

• Tarucha S

  Ntt Basic Res. Lab. Kanagawa Jpn

• Masumoto Y

  The Institute For Solid State Physics The University Of Tokyo

• MASUMOTO Yasuaki

  The Institute for Solid State Physics,The University of Tokyo

• TARUCHA Seigo

  Musashino Electrical Communication Laboratory,NTT

• OKAMOTO Hiroshi

  Musashino Electrical Communication Laboratory,NTT

• Tarucha Seigo

  Ntt Basic Research Laboratories Ntt Corporation

• Tarucha Seigo

  Ntt Basic Research Laboratories:department Of Physics University Of Tokyo

• Tarucha Seigo

  Musashino Electrical Communication Laboratory Ntt

• Masumoto Yasuaki

  The Institute For Solid State Physics The University Of Tokyo

• Tarucha S

  Ntt Basic Research Laboratories Ntt Corporation

• Okamoto Hiroshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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