Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-02-20
著者
-
Mizuta Masashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
-
Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
-
TACHIKAWA Maki
Department of Physics, Faculty of Science, The University of Tokyo
-
Tachikawa M
Meiji Univ. Kawasaki Jpn
-
Tachikawa Maki
Department Of Physics The University Of Tokyo
-
Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
-
MINOMURA Shigeru
Department of Physics,Faculty of Science,Hokkaido University
-
KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
-
Tachikawa Maki
Department Of Physics Faculty Of Science The University Of Tokyo
-
Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
-
Minomura Shigeru
Department Of Physics Faculty Of Science Hokkaido University
-
Minomura Shigeru
Department Of Fundamental Natural Science Okayama University Of Science
-
Tachikawa Masami
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
-
Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
-
Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
関連論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Nonequilibrium Rotational Energy Distribution in NH_3 Supersonic Molecular Beam
- Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
- Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
- Raman Spectra in Al_xGa_As under High Pressure
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Resonant Tunneling in Triple Barrier Diode under Pressure
- Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
- Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
- Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Dynamics of Trapped Ions in the Presence of Laser Cooling and Radio-Frequency Heating
- Collision Cooling of Ions Stored in Quadrupole Radio-Frequency Trap
- Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
- Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- Dependence of Temperature of Collision-Cooled Ions Stored in an RF Trap on Trapping Parameters
- Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
- 1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuGaS_2 Using Ditertiarybutylsulfide as the Sulfur Source
- Preparation of ZnS:Tm Films by Metalorganic Chemical Vapor Deposition Using Thulium β-Diketonates as Dopants
- Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_)_2 Lattice-Matched to GaP(100)
- Atomic Layer Epitaxy of AlAs and (AlAs)_n(GaAs)_n Superlattices Using Dimethylaluminumhydride as the Al Source
- Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
- Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS
- Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Metastable Behavior of the DX Center in Si-Doped GaAs : Semiconductors and Semiconductor Devices
- Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- Novel Aspects of the Optogalvanic Effect in the CO_2 Laser Medium
- Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- Rate-Equation Analysis of Optogalvanic Effect in CO_2 Laser Medium
- Dynamic Properties of Polar Molecules Confined in Electrostatic Trap : Atoms, Molecules, and Chemical Physics
- Chaotic Laser Oscillation in Sequence Band of CO_2 Molecule
- Sub-Doppler Spectroscopy of Cs Atoms Optically Pumped in a Thin Cell
- Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping
- Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure
- A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
- A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
- Deep Levels in InP Grown by MOCVD
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
- Optical Properties of a-Si:H Ultrathin Layers
- Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
- MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
- Coherent Growth of ZnSe on GaAs by MOCVD
- Photoluminescence Spectra of (GaAs)_(AlAs)_Superlattice under High Pressure
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xP(x〜0.5) on GaAs
- Study of Sensitization Processes in Superionic Conductor α-AgI by Photoacoustic Spectroscopy (I)
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD : Condensed Matter
- Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
- Optical Cross Sections for the Zn-O Center in GaP
- Epitaxial Growth of Wide-Gap Chalcopyrite Materials : Current State and Future
- Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
- Flow-Assisted Optical Trapping of Microparticle Produced by Laser Ablation
- A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates
- Dependence of Temperature of Collision-Cooled Ions Stored in an RF Trap on Trapping Parameters
- Redistribution of Internal Energy of Molecules Scattered from Solid Surfaces