MOCVD Growth of ZnS_xSe_<1-x> Epitaxial Layers Lattice-Matched to GaP Substrates
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概要
- 論文の詳細を見る
ZnS_xSe_<1-x> epitaxial layers have been grown on GaP (100) substrates by metalorganic chemical vapor deposition (MOCVD). The layer lattice-matched to the substrate shows a better surface morphology and a narrower line width of X-ray diffraction rocking curve.
- 社団法人応用物理学会の論文
- 1989-02-20
著者
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Mitsuhashi H
Materials And Devices Research Laboratories R & D Center Toshiba Corporation
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MITSUISHI Iwao
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Mitsuishi I
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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MITSUHASHI Hiroshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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