Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
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概要
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We report the first growth of selectively doped n-GaInP/GaAs heterostructures by low pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium, triethylgallium, phosphine and arsine as source materials. The Shubnikov-de Haas oscillation and the temperature dependence of electron mobility indicate that a two-dimensional electron gas is present at the GaInP/GaAs interface. It is noted that the persistent photoconductivity observed in these heterostructures was very weak. These results suggest potential application of this material system to high electron mobility transistors (HEMT).
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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Tone Kiyoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Nakayama Takao
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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TONE Kiyoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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IECHI Hiroyuki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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OHTSU Kazuyoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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