Organometallic Vapor Phase Epitaxial Growth of In_<1-x>Ga_xP(x〜0.5) on GaAs
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概要
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In_<1-x>Ga_xP (x ∼ 0.5) layers have been grown on GaAs by low-pressure vapor phase epitaxy using triethylindium (TEI), triethylgallium (TEG) and phosphine. The observation of surface morphology and the measurements of peak energy and half-width of photoluminescence spectra indicate that high quality layers lattice-matched to GaAs substrates can be grown by con-trotting the substrate temperature and the TEI and TEG flows. The best sample has shown a room-temperature photoluminescence efficiency comparable to that of LPE layers of the same composition.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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IWAMOTO Takashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Iwamoto Takashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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