A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
スポンサーリンク
概要
- 論文の詳細を見る
Deep levels in undoped n-type InP epitaxial layers grown by MOCVD on Fe-doped InP substrates were investigated by DLTS and photo-excited DLTS. Two main electron traps, F1 and F2, were observed in the films. The concentration profile of F1 seems to be related to that of donors. The concentration of F2 increases as the substrate is approached, suggesting the out-diffusion of Fe from the Fe-doped substrate. The activation energy E_n and the carrier capture cross section σ_n were found to be 0.48 eV and 〜6×10^<-19>cm^2 respectively for F1; and 0.78 eV and 10^<-20>〜10^<-21>cm^2 respectively for F2 in the temperature range investigated. Another level was also detected in the Fe-doped substrate, and its E_n and σ_x were found to be 0.24 eV and 2×10^<-16>cm^2, respectively. We speculate that either or both of these F1 and F2 traps are the origin of the substantial looping phenomenon in the drain I/V characteristics previously observed in InP MESFETs.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
-
Mizuta Masashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Ogura Mototusgu
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
-
HASE Nobuyasu
Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.
-
Hase Nobuyasu
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
-
Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
-
OGURA Mototsugu
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
-
Ogura Mototsugu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Ogura Mototusgu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
-
MIZUTA Masashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
関連論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
- Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
- Raman Spectra in Al_xGa_As under High Pressure
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
- Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
- Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuGaS_2 Using Ditertiarybutylsulfide as the Sulfur Source
- Preparation of ZnS:Tm Films by Metalorganic Chemical Vapor Deposition Using Thulium β-Diketonates as Dopants
- Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_)_2 Lattice-Matched to GaP(100)
- Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
- Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS
- Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Metastable Behavior of the DX Center in Si-Doped GaAs : Semiconductors and Semiconductor Devices
- Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
- A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
- InP MESFET Grown by MOCVD
- Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping
- Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
- A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
- A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
- Deep Levels in InP Grown by MOCVD
- Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
- Optical Properties of a-Si:H Ultrathin Layers
- Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
- MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
- Coherent Growth of ZnSe on GaAs by MOCVD
- A 1.3 μm InGaAsP/InP Multiquantum Well Laser Grown by LPE
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xP(x〜0.5) on GaAs
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD : Condensed Matter
- Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
- Optical Cross Sections for the Zn-O Center in GaP
- Epitaxial Growth of Wide-Gap Chalcopyrite Materials : Current State and Future
- Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
- A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates