A 1.3 μm InGaAsP/InP Multiquantum Well Laser Grown by LPE

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概要

• 論文の詳細を見る

• We have successfully achieved a 1.3 μm InGaAsP/InP BH laser with multiquantum well active layers grown by low-temperature LPE technique (T_g=589 ℃). The thickness of thin epitaxial layers was less than de Broglie wavelength. The laser has a threshold current of 19 mA, an external differential quantum efficiency of 〜40%, and T_0 value of 〜145K in the range from -5℃ to 20℃ and 〜60 K from 20℃ to 70℃.

• 社団法人応用物理学会の論文
• 1985-02-20

著者

• Hase Nobuyasu

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Kajiwara Takao

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Sasai Yoichi

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
• A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
• InP MESFET Grown by MOCVD
• A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
• Deep Levels in InP Grown by MOCVD
• Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
• A 1.3 μm InGaAsP/InP Multiquantum Well Laser Grown by LPE

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