Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
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概要
- 論文の詳細を見る
The behavior of diffused Zn and Te impurities in the InGaAsP-InP DH laser structure grown by LPE has been investigated by means of secondary ion mass spectrometry (SIMS) and photoluminescence (PL) technique. Judging from SIMS profiles of these impurities in the InGaAsP active layer, we have found that a mutual diffusion occurs in this layer and that these impurities at the heterointerface pile up. The study of PL measurements has further shown that the diffused impurities influence the optical properties of the active layer.
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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Yoshioka Yoshiaki
Matsushita Technoresearch Inc.
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Yoshioka Yoshiaki
Matsushita Technoresearch Co. Ltd.
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Sasai Y
Matsushita Electric Ind. Co. Ltd. Osaka Jpn
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HASE Nobuyasu
Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Hase Nobuyasu
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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SASAI Yoichi
Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Sasai Yoichi
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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YOSHIOKA Yoshiaki
Matsushita Technoresearch, Inc.
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