A Study of Carrier Concentration Profiles for Heavily Si-Implanted Semi-Insulating GaAs

概要

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A dip in the carrier concentration profile at a depth of 0.2 μm has been observed when Si was ion-implanted into a semi-insulating GaAs with a dose of 5×10^<14>cm^<-2> at an energy of 150 keV with subsequent annealing at 850℃ for 30 min without encapsulant. Such a dip was not observed when infrared rapid thermal annealing at 1000℃ for 10 s was employed. SIMS and PL analyses revealed that the dip in the carrier profile was closely correlated with the damage or defects remaining after annealing and that such defects were essentially eliminated by infrared rapid thermal annealing at 1000℃.
社団法人応用物理学会の論文
1985-07-20