Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscoty (SIMS)

概要

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We developed a new method of doping side-walls of sub-micron-width trenches using an arsenic planar-type solid-diffusion source at a low pressure. The sheet resistivity, which was measured on the wafer surfaces, is found to be controlled by the oxygen concentration in the tube. Arsenic was doped uniformly in the 6-inch diameter wafer with a standard deviation of 2.7%. The doping was reproducible; the standard deviation of the doping for many batches was 3.0%. A new method of evaluating uniformity of trench side-wall doping using SIMS was also developed. The doping uniformity is confirmed to be within the accuracy of the SIMS measurement.
社団法人応用物理学会の論文
1989-10-20