Low-Energy Double-Ion -Beam Deposition System

概要

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A low-energy double-ion-beam deposition system for high-quality thin-dielectric-film formation has been developed. The system consists of two beam lines (a mental ion beam line and a gas ion beam line) and has a new type of ion-beam deceleration electrodes which can be moved like a folding screen. In this system, decelerated Ta^+ and oxygen ion beams of about 80 and 180 μA / cm^2, respectively, were obtained in a final-energy range of 100〜200 eV. In a deposition test, by simultaneously irradiating with a mass-separated Ta^+ ion beam and an oxygen ion beam, pure and soichiometric Ta_2O_5 films of 50 nm thickness were obtained in one hour at room temperature.
社団法人応用物理学会の論文
1988-01-20