Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Ikeda Atsushi
Department of Cardiology, Nihon University Surugadai Hospital
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Yoneda Takashi
Aset Euv Laboratory
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KAJIYAMA Kenji
Ion Engineering Research Institute Corporation
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KIDO Yoshiaki
Department of Nuclear Engineering,Faculty of Engineering,Kyoto University
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Yoshioka Yoshiaki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.:research And Development Labor
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Yoshioka Yoshiaki
Matsushita Technoresearch Inc.
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Yoshioka Yoshiaki
Matsushita Technoresearch Co. Ltd.
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Yoshioka Yoshiaki
Matsushita Technoresearch Incorporation
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YONEDA Tomoaki
Ion Engineering Research Institute Corporation
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kido Y
Ritsumeikan Univ. Shiga‐ken Jpn
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Kido Yoshiaki
Department Of Internal Medicine Division Of Diabetes Metabolism And Endocrinology Kobe University Gr
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Ikeda Atsushi
Department Of Cardiology Kurashiki Central Hospital
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Yoneda T
Aset Euv Laboratory
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TOHJOU Fumiyo
Matsushita TechnoResearch Incorporation
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KISAKA Yoshiaki
Department of Physics, Ritsumeikan University Kusatsu
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NISHIMURA Tomoaki
Department of Physics, Ritsumeikan University Kusatsu
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Ikeda A
Division Of Applied Biological Chemistry Department Of Bioscience And Biotechnology Faculty Of Agric
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Kajiyama Kenji
Ion Engineering Research Institute Co.
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Kajiyama Kenji
Ion Engineering Research Institute
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