Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Hayafuji Norio
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
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Hayafuji Norio
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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MIYASHITA Motoharu
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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KADOIWA Kaoru
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Takashi
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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KUMABE Hisao
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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MUROTANI Toshio
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Miyashita Motoharu
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
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Miyashita Motoharu
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kadoiwa Kaoru
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
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Kumabe H
Mitsubishi Electric Corp. Hyogo
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Murotani T
Mitsubishi Electric Corp. Hyogo
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
関連論文
- Crack Propagation and Mechanical Fracture in GaAs-on-Si
- Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
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