P-Type Conducting ZnSe and ZnSSe by N2-Gas Doping During Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Highly conductive p-ZnSe and ZnSSe can be grown by N2-gas doping without any activation process during molecular beam epitaxial growth. Photoluminescence spectra indicated that the properties of N2-gas- and nitrogen-radical-doped ZnSe with nearly equal N A–N D are almost the same. Using the N2-gas doping method, the first laser oscillation from a ZnSe-based laser diode without nitrogen-radical doping was achieved. The LED driving voltage was 3.8 V at the operating current of 20 mA.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Niina Tatsuhiko
Microelectronics Research Center, SANYO Electric Co., Ltd.
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YODOSHI Keiichi
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Yoshie Tomoyuki
Department Of Electrical Engineering Kyoto University
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Yagi Katsumi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Hishida Yuji
Microelectronics Research Center, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 57
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Yoshie Tomoyuki
Microelectronics Research Center, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 57
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Hishida Yuji
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Yodoshi Keiichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Yoshie Tomoyuki
Microelectronics Research Center Sanyo Electric Co. Ltd.
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- P-Type Conducting ZnSe and ZnSSe by N2-Gas Doping During Molecular Beam Epitaxy
- P- Type Conducting ZnSe and ZnSSe by N_2-Gas Doping during Molecular Beam Epitaxy