Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE
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概要
- 論文の詳細を見る
GaAlAs/GaAs surface emitting (SE) junction lasers have been fabricated by molecular beam epitaxy (MBE). It is easy for the MBE method to obtain a good flatness of grown surfaces to be utilized as reflective mirrors, and to control the thickness of the grown layer more precisely, compared with liquid phase epitaxy (LPE). We report on the room-temperature pulsed oscillation of a SE laser grown by MBE. The threshold current was as low as 450 mA, and single-mode operation was achieved at λ = 8735 Å.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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Yamaguchi Taichi
Superconductivity Research Dept. Material Research Lab. Fujikura Ltd. :(present Address)quality Assu
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Yagi K
Tokyo Inst. Technol. Tokyo Jpn
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Nishimura Takayuki
Research Center Sanyo Electric Co. Lid.
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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YAGI Katsumi
Research Center, SANYO Electric Co., Ltd.
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YAMAGUCHI Takao
Research Center, SANYO Electric Co., Ltd.
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NIINA Tatsuhiko
Research Center, SANYO Electric Co., Ltd.
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Niina Tatsuhiko
Research Center Sanyo Electric Co. Lid.
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Yamaguchi Takao
Research Center Sanyo Electric Co. Lid.
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