Fabrication of GaAs/AlGaAs GRIN-SCH Lasers with Newly Developed Ridge Waveguide
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概要
- 論文の詳細を見る
In this paper, a new ridge fabrication method is demonstrated. The upside cladding region is composed of two different Al mole fraction AlGaAs layers which have been selectively etched to form a ridge waveguide. GaAs/AlGaAs graded-index waveguide separate-confinement heterostructure (GRIN-SCH) lasers with this newly developed ridge waveguide have shown high external differential quantum efficiencies, with a maximum of 80% for a 4 μm×250 μm cavity.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Yamauchi Hideki
Research Center Sanyo Electric Co. Ltd.
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Yamaguchi Taichi
Superconductivity Research Dept. Material Research Lab. Fujikura Ltd. :(present Address)quality Assu
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yagi K
Tokyo Inst. Technol. Tokyo Jpn
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YAGI Katsumi
Research Center, SANYO Electric Co., Ltd.
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YAMAGUCHI Takao
Research Center, SANYO Electric Co., Ltd.
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NIINA Tatsuhiko
Research Center, SANYO Electric Co., Ltd.
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Niina Tatsuhiko
Research Center Sanyo Electric Co. Lid.
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Yamaguchi Takao
Research Center Sanyo Electric Co. Lid.
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