Nishimura Tadashi | Lsi Research & Development Laboratory Mitsubishi Electric Corporation

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概要

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著作論文

Crack Propagation and Mechanical Fracture in GaAs-on-Si
Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
Surface Structure of TiO_2-Terminated SrTiO_3(001) Sudied by Medium Energy Ion Scattering and Ultraviolet Photoelectron Spectroscopy
Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
Mechanism of Temperature Dependence of Piezoelectric Properties for Pb(Zr,Ti)O_3
Photochemical Hole Burning of Quinone Derivatives : Future Technology
Photochemical Hole Burning of Quinone Derivatives
Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication : A-6: SILICON CRYSTALS
Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature
Fabrication of GaAs/AlGaAs GRIN-SCH Lasers with Newly Developed Ridge Waveguide
Fabrication of SiC Blue LEDs Using Off-Oriented Substrates
Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE

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