Hamaguchi C | Osaka Univ. Osaka Jpn
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概要
関連著者
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Taniguchi K
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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安田 直彦
岐阜大工
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Yasuda Naoki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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HARAGUCHI Masanobu
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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Haraguchi Masaru
Department Of Electrical And Electronics Engineering Sophia University
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Kubo Hitoshi
Department Of Orthopaedic Surgery Kakogawa National Hospital
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Kubo Hitoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Haraguchi Masanobu
Department Of Electrical And Electronics Engineering Sophia University
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Haraguchi Masanobu
Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
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Quazi Deen
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Ryzhii V
Univ. Aizu Aizu-wakamatsu Jpn
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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Kubo H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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SURIS Robert
A.F.Ioffe Physical-Technical Institute
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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NAKAMURA Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Yamaguchi M
Department Of Physics Yokohama National University
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Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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Arima H
Mitsubishi Electric Corp. Hyogo Jpn
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Arima Hideaki
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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YAMAGUCHI Masahito
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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TANIMOTO Hiroyoshi
Department of Electronics, Faculty of Engineering, Osaka University
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SURIS Robert
A.F. Ioffe Physical-Technical Institute RAS
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Fukui Masao
Department Of Optical Science And Technology Faculty Of Engineering The University Of Tokushima
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Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Matsumoto Takuji
Department Of Machine Intelligence And System Engineering Intelligent System Design Laboratory Tohok
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Tanimoto Hiroyoshi
Department Of Electronics Faculty Of Engineering Osaka University
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Yamaguchi Masakazu
Research And Development Center Toshiba Corporation
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Yamaguchi Masafumi
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
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原口 雅宣
徳島大学工学部
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Fukui Masuo
Department Of Electrical And Electronic Engineering Tokushima University
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Mori N
Fuji Photo Film Co. Ltd. Kanagawa Jpn
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corporation
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MATSUMOTO Toshiyuki
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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SHIRAKAWA Tsuguru
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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MORIYASU Katsuji
Department of Electronic Engineering, Osaka University
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OSAKO Shinichi
Department of Electronic Engineering, Osaka University
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Yamaguchi M
Nagoya Univ. Nagoya Jpn
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Osako Shinichi
Department Of Electronic Engineering Osaka University
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Shirakawa T
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shirakawa Tsuguru
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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原口 雅宣
徳島大学大学院ソシオテクノサイエンス研究部
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Moriyasu Katsuji
Department Of Electronic Engineering Osaka University
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Matsumoto Toshiyuki
Department Of Chemistry Faculty Of Science Hokkaido University
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Matsumoto Takuya
Isir Osaka Univ.
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Nakamura Hiroshi
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Science University Of Tokyo
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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UENO Shuichi
Department of Communication and Integrated Systems, Tokyo Institute of Technology
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Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Ulsi Research Center Toshiba Corporation
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FUJII Toshio
Fujitsu Laboratories Ltd.
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Hamamoto K
Univ. Tokyo Tokyo Jpn
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KHMYROVA Irina
Computer Solid State Physics Laboratory, University of Aizu
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YAMAGUCHI Yasuo
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Yamaguchi Y
Inst. Fundamental Chemistry Kyoto Jpn
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HASHIMOTO Kazuhiko
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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QUAZI Deem
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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TOYOSHIMA Yoshiaki
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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MARUYAMA Akinori
Department of Electronic Engineering, Osaka University
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KAKUMU Masakazu
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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LASSERRE Jean
Department of Electronics, Faculty of Engineering, Osaka University
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Ueno Hiroaki
Department Of Electronic & Electrical Engineering Kanagawa Institute Of Technology
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Lasserre Jean
Department Of Electronics Faculty Of Engineering Osaka University
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Kakumu Masakazu
Semiconductor Device Engineering Laboratory Toshiba Corporation
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NAKASHIMA SHINICHI
Department of Urology, National Kanagawa Hospital
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KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
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Taniguchi Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Fujii Toshio
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Limited
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MITSUI Katsuyoshi
ULSI Developtment Center, Mitsubishi Electric Corporation
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ABE Haruhiko
ULSI Development Center, Mitsubishi Electric Corporation
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Maruyama Akinori
Department Of Electronic Engineering Osaka University
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Toyoshima Yasutake
Electrotechnical Labotatory
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Toyoshima Yoshiaki
Semiconductor Device Engineering Laboratory Toshiba Corporation
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Mitsui Katsuyoshi
Ulsi Developtment Center Mitsubishi Electric Corporation
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Abe Haruhiko
Ulsi Development Center Mitsubishi Electric Corporation
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Yamaguchi Yasuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Fujii T
Central Research Institute Of Electric Power Industry
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Ueno Hiroaki
Department Of Electronic Engineering Osaka University
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Kubo Hitoshi
Department Of Electronic Engineering Osaka University
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Kuroi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Khmyrova Irina
Computational Nanoelectronics Laboratory University Of Aizu
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Maruyama Akinori
Department Of Electrical Engineering Faculty Of Engineering Doshisha University
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MURAKAMI Motokazu
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Nakashima Shinichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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WADA Yuuko
Department of Electronic Engineering, Osaka University
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OSAKO Shin-ichi
Department of Electronic Engineering, Osaka University
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Wada Yuuko
Department Of Electronic Engineering Osaka University
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Khmyrova I
Comp. Solid State Physics Lab Univ. Of Aizu
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Ueno Shuichi
Department Of Communication And Integrated Systems Tokyo Institute Of Technology
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Murakami Motokazu
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hashimoto Kazuhiko
Semiconductor Device Engineering Laboratory Toshiba Corporation
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Ueno Shuichi
Department Of Biological Science Faculty Of Science Yamaguchi University
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Ueno Shuichi
Department Of Electronic Engineering Osaka University
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Wada Yuuko
Department of Chemistry, Faculty of Science, Nara Women's University
著作論文
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)