YAMAGUCHI Masahito | Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

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概要

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著作論文

Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
Wannier-Stark Localization in Superlattices
Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy--Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
Effects of Nano- and Microscale SiO
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
Stacking Faults and Luminescence Property of InGaN Nanowires
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

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