Sano Tomotaka | Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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概要
- Sano Tomotakaの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japanの論文著者
関連著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Sano Tomotaka
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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Doi Tomohiro
Department Of Biotechnology Graduate School Of Engineering Osaka University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Yoshino Takashi
Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan
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Inada Shunko
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sugiyama Tomohiko
Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan
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Sugiyama Tomohiko
Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan
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Amano Hiroshi
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Doi Tomohiro
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Honda Yoshio
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Tanikawa Tomoyuki
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Kushimoto Maki
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
著作論文
- High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
- Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN