High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

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概要

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• We fabricated blue ({\sim}450 nm), blue-green ({\sim}500 nm), and green ({\sim}525 nm) light-emitting diodes (LEDs) of different dislocation densities (DD) and characterized their internal quantum efficiency (IQE). The IQE of the blue LEDs fabricated using GaN substrate exceeded 90% (DD: {\sim}10^{6} cm^-2), however, when we used a GaN-on-sapphire substrate (DD: {\sim}10^{8} cm^-2), IQE was limited to {\sim}60%. Droop was reduced by use of the GaN substrate. The junction temperature of the GaN-on-sapphire substrate was found to be {\sim}200 °C although the junction temperature of the GaN substrate was {\sim}50 °C when a forward current of 100 A/cm²was driven. A lowering of IQE in green LEDs to {\sim}60% was observed, even though we used a low-dislocation-density substrate [DD: (1{\mbox{--}}2)\times 10^{7} cm^-2]. The junction temperature of blue-green and green LEDs was about 100 °C when a forward current of 177 A/cm²was driven, which indicated that junction temperature is not a major factor for IQE suppression in green LEDs.

• 2013-08-25

著者

• Doi Tomohiro

  Department Of Biotechnology Graduate School Of Engineering Osaka University

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• HONDA Yoshio

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• Yoshino Takashi

  Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan

• Sano Tomotaka

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Inada Shunko

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Sugiyama Tomohiko

  Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan

• Sugiyama Tomohiko

  Corporation R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan

• Amano Hiroshi

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Doi Tomohiro

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Honda Yoshio

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Honda Yoshio

  Department of Chemistry, Faculty of Science, Kanazawa University

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