High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
スポンサーリンク
概要
- 論文の詳細を見る
Nitride-based blue light-emitting diodes (LEDs) with a moth-eye structure on the back of a 6H–SiC substrate have been developed. The moth-eye LED has a roughness less than the optical wavelength at the back surface of the SiC substrate fabricated by reactive ion etching (RIE) with CF4 gas. The light extraction efficiency and corresponding output power have been increased to 3.8 times those of a LED with a conventional structure. The experimental findings agree with the results of a theoretical analysis of the effect of the moth-eye structure.
- 2005-10-15
著者
-
Shiomi Hiromu
Sixon Ltd.
-
Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
-
Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
-
IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
-
HONSHIO Akira
Department of Materials Science and Engineering, and Nano-factory, Meijo University
-
KAMIYAMA Satoshi
Department of Materials Science and Engineering, and Nano-factory, Meijo University
-
Kawashima Takeshi
Department Of Chemistry Shool Of Hygienic Sciences Kitasato University
-
Miyake Yasuto
Department Of Electrical Electronic And Information Engineering Osaka University
-
Akasaki Isamu
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kasugai Hideki
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Mishima Shunsuke
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Iida Kazuyoshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kinoshita Hiroyuki
SiXON Ltd., 47 Umezutakase-cho, Ukyo-ku, Kyoto 615-8686, Japan
-
Kasugai Hideki
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Honshio Akira
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Iwaya Motoaki
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kinoshita Hiroyuki
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
-
Shiomi Hiromu
SiXON Ltd., 47 Umezutakase-cho, Ukyo-ku, Kyoto 615-8686, Japan
-
Amano Hiroshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Iida Kazuyoshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kamiyama Satoshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
関連論文
- P3-34 Nonradiative Recombination Process in Semi-insulating 6H-SiC Bulk Single Crystals Evaluated by Photoacoustic Spectroscopy(Poster session 3)
- P3-33 Thermal Diffusivity of Semi-Insulating 6H-SiC Single Crystal Wafers Evaluated by Photopyroelectric (PPE) Method(Poster session 3)
- Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- Optical Properties of Strained AlGaN and GaInN on GaN
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
- Present and Future Nitride-Based Devices
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Investigation of the Leakage Current in GaN P-N Junctions
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
- Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
- High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
- Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
- Effects of Nano- and Microscale SiO
- Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
- GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
- Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
- Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
- Stacking Faults and Luminescence Property of InGaN Nanowires
- Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
- GaN Overgrowth on Thermally Etched Nanoporous GaN Template
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
- Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
- Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
- Gel filtration study of the effect of urea on the dissolution state of sodium dodecyl sulfate.
- GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy