Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography
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概要
- 論文の詳細を見る
We applied light scattering tomography (LST), which is powerful for rapid and nondestructive observation of structural defects in semiconductor single crystals, to investigate the defect distribution of 6H-SiC single crystal wafers for the first time. In conventional LST observation, a difference in tomograms between N-doped and semi-insulating 6H-SiC wafers was found. It is caused by the difference in optical absorption and scattered light in wafers. We successfully constructed three-dimensional (3D) LST images of the defects by rendering layer-by-layer two-dimensional (2D) LST images on different planes perpendicular to the direction of crystal growth. The 3D-LST images showed clearly the various defect distributions in depth direction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Shiomi Hiromu
Sixon Ltd.
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Mori Taichiro
Department Of Materials Science And Engineering National Defense Academy
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Hayashi Toshihiko
Sixon Ltd.
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Wutimakun Passapong
Department Of Industrial Engineering Chulachomklao Royal Military Academy
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Miyazaki Hisashi
Department Of Applied Physics Osaka City University
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Morimoto Jun
Department Of Applied Physics National Defense Academy
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Okamoto Yoichi
Department Of Applied Physics National Defense Academy
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Shiomi Hiromu
SiXON Ltd., 47 Umezu-Takasecho, Ukyo, Kyoto 615-0906, Japan
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Mori Taichiro
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Miyazaki Hisashi
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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