Double-Peak Emission Rate Spectrum of DX-Centers in AlxGa1-xAs
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概要
- 論文の詳細を見る
Emission rate spectra S($\lambda$) of the DX-centers in AlxGa1-xAs were studied for dopants, such as Te, Sn, Si and Se, using the SADLTS (spectral analysis of deep level transient spectroscopy) method. The double peak emission rate spectra were observed for these DX-centers in AlxGa1-xAs at around $x{=}0.5$ of Al mole fraction. The band effect (crossover of L-band and $\varGamma$-band) is the dominant contribution to the rather broadened spectra of DX-centers appearing in the conventional DLTS.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Fudamoto Michihiro
Department Of Materials Science And Engineering The National Defense Academy
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TAHIRA Kenichiro
Department of Electrical and Electronic Engineering, National Defense Academy
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Morimoto Jun
Department Of Applied Physics National Defense Academy
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Miyakawa Toru
Department Of Applied Physics The National Defense Academy
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Miyakawa Toru
Department of Materials Science and Engineering, The National Defense Academy, Yokosuka, Kanagawa 239
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Fudamoto Michihiro
Department of Materials Science and Engineering, The National Defense Academy, Yokosuka, Kanagawa 239
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Tashiro Syuuji
Department of Materials Science and Engineering, The National Defense Academy, Yokosuka, Kanagawa 239
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Tashiro Syuuji
Department of Applied Physics, The National Defense Academy, Yokosuka, Kanagawa 239
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