Transient Characteristics of PME Effect : Theory
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概要
- 論文の詳細を見る
Assuming a single life time τ for both of the minority and majority carriers, a surface recombination velocity s, and an absorption coefficient k, the spatial and time distribution of excess minority carriers injected in a semiconductor by a monochromatic light pulse is expressed in terms of error functions with space and time variables normalized to diffusion length L and τ. The result is characterized by two material parametersα=kL and γ=sτ/L. PME output proportional to the surface density of excess carriers p(0, t) is shown to decay much faster than the PC output because for large α inward diffusion of carriers accelerates the decay of p(0, t) but has no effect on the total number of carriers. Results of preliminary measurements on n-Ge samples using a Q-switched ruby laser is shown to be in reasonable agreement with these theoretical conclusions.
- 社団法人応用物理学会の論文
- 1972-03-05
著者
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TAHIRA Kenichiro
Department of Electrical and Electronic Engineering, National Defense Academy
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Miyakawa Toru
Department Of Applied Physics The National Defense Academy
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Miyakawa Toru
Department Of Electrical Engineering Defense Academy
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Tahira Kenichiro
Department Of Electrical Engineering Defense Academy
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MIYAKAWA Toru
Department of Electrical Engineering, Defense Academy
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