Multiexponential Analysis of Deep Level Transient Spectroscopy (C2-MEDLTS)
スポンサーリンク
概要
- 論文の詳細を見る
A novel method of analyzing the deep impurity levels in semiconductors is proposed. This method analyzes the square of the transient junction capacitance waveforms as multiexponentials by using the nonlinear least squares method and is referred to as C2-MEDLTS. The effect on the emission rate $\tau$ of the deep levels in the nonionized region ($\lambda$-effect) is included. It allows correct evaluation of the activation energies and capture cross sections even for the high concentrations of closely spaced deep levels ($N_{\text{T}}/N_{\text{D}}\simeq 1$).
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-04-20
著者
-
TAHIRA Kenichiro
Department of Electrical and Electronic Engineering, National Defense Academy
-
Morimoto Jun
Department Of Applied Physics National Defense Academy
-
Miyakawa Toru
Department Of Applied Physics The National Defense Academy
-
Miyakawa Toru
Department of Applied Physics, The National Defense Academy, Yokosuka, Kanagawa 239
-
Tashiro Syuuji
Department of Materials Science and Engineering, The National Defense Academy, Yokosuka, Kanagawa 239
-
Tashiro Syuuji
Department of Applied Physics, The National Defense Academy, Yokosuka, Kanagawa 239
関連論文
- P3-34 Nonradiative Recombination Process in Semi-insulating 6H-SiC Bulk Single Crystals Evaluated by Photoacoustic Spectroscopy(Poster session 3)
- P3-33 Thermal Diffusivity of Semi-Insulating 6H-SiC Single Crystal Wafers Evaluated by Photopyroelectric (PPE) Method(Poster session 3)
- Studies of Defect Detection and Thermal Influence in Semi-Insulating 6H-SiC Substrates Using a Long-Wavelength Infrared Thermal Imaging Camera
- Studies of Localized Levels in HgCdTe Grown on Si and CdZnTe Substrates Using Metal-Organic Chemical Vapor Deposition
- Deep Levels in Hg_Cd_Te Grown by Metal-Organic Chemical Vapor Deposition
- Studies of Deep Levels in HgCdTe Grown on CdZnTe and Si Substrates
- Study of Deep Levels in Mesa-Type HgCdTe Device
- Thermoelectric Properties of Amorphous Zinc Oxide Thin Films Fabricated by Pulsed Laser Deposition
- Estimation of Schottky Contacts to Porous Si by Photoacoustic Spectroscopy
- Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
- Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
- CB : a humanoid research platform for exploring neuroscience
- Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon
- Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in Al_xGa_As:Sn : Electrical Properties of Condensed Matter
- Annealing Temperature Dependence of the Amorphous Structure of Amorphous Si-Ge-Au Thin Films
- Anomalous Large Thermoelectric PoWer on Heavily B-Doped SiGe Thin Films with Thermal Annealing : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of Sb_2O_3-Doped ZnO Varistors by Photoacoustic Spectroscopy
- Size Effects on Photoacoustic Spectra for GaAs Fine Powder
- Photoacoustic Spectra on the Bi or Pr Doped ZnO Varistors
- Characterization of Interface States in Degraded ZnO Varistors(Electrical Properties of Condensed Matter)
- Pinning Effect by Interface States in Pr-type ZnO Varistors : Electrical Properties of Condensed Matter
- Photoacoustic Spectra on the ZnO and CdO Compound Semiconductor
- AC Measurement of Seebeck Coefficient in Disk-Shaped Semiconductors Using CW-Lasers
- Excitation Spectrum of 3.39 μm Tansmission Modulation by Tunable CW-CO_2 Laser in p-Ge
- Theory of CW-Laser-Induced Dynamic Grating by Inter-Valence-Band Absorption in p-Type Semiconductors
- CW-Laser Induced Dynamic Grating and Subpicosecond Hole Relaxation Time in p-Ge
- Deep Trap Measurement in Hg_Cd_xTe by Isothermal Capacitance and Deep-Level Transient Spectroscopy
- Improvement of Signal-to-Noise Ratio in Microphone Photoacoustic Spectroscopy
- Thermoelectric Characteristics of Si/Ge Superlattice Thin Films at Temperatures Less Than 300 K
- Photoacoustic Spectra of ZnO-Co Alloy Semiconductors
- The Study of Interface States in ZnO Varistors by Injection Pulse Width Dependence of Transient Response
- Photoacoustic Spectra of CdS: Cu by Piezoelectric Transducers : Photo-Acoustic Spectroscopy
- Analysis of Infrared Photoacoustic Wave Form Detected by Piezoelectric Transducer : Photoacoustic Spectroscopy and Ultrasonic Microscopy
- Auger Electron Spectroscopy of Cu_2S-CdS Heterojunction Interface
- Line Spectrum Emission on a Surface and Switching Characteristics of (Ni_Zn_)Fe_2O_4 Ferrite under Pulse Voltage
- Auger Electron Spectroscopy of the Polar (0001) and (0001^^-) Surfaces of CbS Single Crystal
- Stretched Exponential Capacitance Transient and Emission Rate Spectrum of DX-Centers
- Photoelectrical Characteristics of Cu_2S-CdS Heterojunction Diodes
- On-Line Optimal Control Strategy for a Consecutive Reaction System
- Barrier Model of Cu_2S-CdS Heterojunction Diodes Estimated from Open-Circuit Photovoltage Spectrum and Cathodoluminescence
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
- Amplitude and Phase Signals of the Photothermal Deflection Images
- Thermoelectric Properties of and Dopant Distribution in SiC Thin Films
- Photoacoustic Spectrum and Surface Morphology of Porous Silicon
- Band Gap of Porous Silicon Estimated by Photoacoustic Spectra
- Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy
- Photoacoustic Spectroscopy of Cu_xS/CdS Heterojunction
- Thermal Diffusivity of Semiconductors Evaluated by Differential PPE Method : Physical Acoustics
- Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
- Pulsed Photoacoustic Effect in Semiconductors : Photoacoustic Effect and Spectroscopy
- Secondary Photoacoustic Spectra of CdS: Cu by Gas-microphone Method : Photoacoustic Spectroscopy
- Evaluation of ZnO Varistors by Photoacoustic Spectroscopy
- An Analysis of EBIC Response of ITO/poly-Si Solar Cells : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Photoacoustic Signal Induced by Pulse Ruby Laser in CdS : Photo-Acoustic Spectroscopy
- Characterization of LiNbO3 Single-Crystal Substrates Irradiated with Electrons
- Nondestructive Testing Technique for Defect Detection in LiNbO3 Using Infrared Thermal Imaging Camera
- The Study of the Origin of the Anomalously Large Thermoelectric Power of Si/Ge Superlattice Thin Film
- Anomalous Large Thermoelectric Power of the Si and Au Doped Ge Superlattice Thin Film
- Distribution of Deep Level Parameters in Spectral Analysis of DLTS (SADLTS) : Electrical Properties of Condensed Matter
- Studies of Defects and Thermal Conductivity of Mixed Polytype in 6H-SiC Single Crystal by Polarized Optical Microscopy, Light Scattering Tomography, and Thermal Microscopy
- Evaluation of Interface States in ZnO Varistors by Spectral Analysis of Deep Level Transient Spectroscopy
- The Effect of Exciton Interaction on the Extreme Ultra-Violet Absorption in LiF
- Feを添加したSiCの熱電特性
- Temperature dependence of the thermoelectric properties of Si doped SiC
- Excitons and Plasmons in Insulators
- Non-Linear Characteristics of Infrared Photoacoustic Signal in p-Ge : Photoacoustic Spectroscopy
- Temporal and Spectral Behavior of Absorption Saturation in P-Ge around 10.6 μm
- Electronic Structure of Excitons in KCl
- Conduction Band Structure of KCl
- Transient Characteristics of PME Effect : Theory
- The Conduction Band Structure of KCl
- Superimposed Emissions on Enhanced Green Emission from ZnO:Pr Powders by Evacuated Sealed Silica Tube Method
- Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
- Evaluation of Co- and Pr-Doped Zinc Silicate Powders by Photoacoustic Spectroscopy
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography
- Distributions of Interface States and Bulk Traps in ZnO Varistors
- Photoacoustic Spectra from Co Doped ZnO with Different Grain or Cluster Sizes
- The Measurement of Annealing Cycle Effect of Si–Ge–Au Amorphous Thin Film with Anomalously Large Thermoelectric Power by Using Photoacoustic Spectroscopy
- Estimation of Schottky Contacts to Porous Si by Photoacoustic Spectroscopy
- Photoacoustic Spectra of Heavily Co-Doped ZnO Powders
- Evaluation of ZnO Varistors by Photoacoustic Spectroscopy
- Photoacoustic and Photoluminescence Spectra of Annealed 3,4,9,10-Perylenetetracarboxylic Dianhydride Films
- Double-Peak Emission Rate Spectrum of DX-Centers in AlxGa1-xAs
- Multiexponential Analysis of Deep Level Transient Spectroscopy (C2-MEDLTS)
- Photoacoustic Spectra and Thermoelectric Properties of Amorphous Si/Au/Ge/Au Superlattice
- Double-Peak Emission Rate Spectrum of DX-Centers in AlxGa1-xAs