Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-01-15
著者
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Nakashima Hiroshi
Department Of Cardiology Nagasaki Citizens Hospital
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MORIMOTO Jun
Department of Materials Science and Engineering, National Defense Academy
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Morimoto J
Department Of Materials Science And Engineering National Defense Academy
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OKAMOTO Yoichi
Department of Materials Science and Engineering, National Defense Academy
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TAHIRA Kenichiro
Department of Electrical and Electronic Engineering, National Defense Academy
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MIYAKAWA Toru
Department of Materials Science and Engineering, The National Defense Academy
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MIYAKAWA Toru
Dept. of Materials Science and Engineering, National Defense Academy
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Miyakawa T
Dept. Of Materials Science And Engineering National Defense Academy
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Morimoto Jun
Department Of Applied Physics National Defense Academy
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Miyakawa Toru
Department Of Applied Physics The National Defense Academy
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Okamoto Yoichi
Department Of Applied Physics National Defense Academy
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KAWAHARA Hisatsugu
Department of Materials Science and Engineering, The National Defense Academy
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Kawahara H
Nissin Electric Co. Ltd. Kyoto Jpn
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Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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