Nakashima H | Hyogo University

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著作論文

Effects of SO_2 on Respiratory System of Adult Miyakejima Resident 2 Years after Returning to the Island
Toxicity of Silicon Compounds in Semiconductor Industries
Oral Toxicity of Bismuth in Rat : Single and 28-Day Repeated Administration Studies
A 13-Week Toxicity Study of Bismuth in Rats by Intratracheal Intermittent Administration
Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
Association of Thoracic Kyphosis with Subjective Poor Health, Functional Activity and Blood Pressure in the Community-Dwelling Elderly
In Vitro Solubility and In Vivo Toxicity of Indium Phosphide
Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon
Urinary Excretion of an Oxidative Stress Marker, 8-hydroxyguanine (8-OH-Gua), among Nickel-cadmium Battery Workers
Toxicity of Fire Decomposition Products of New Fire Extinguishing Agent, 1, 1, 1, 2, 3, 3, 3-Heptafluoropropane
Acute and Subacute Inhalation Toxicity of Highly Purified Phosphine (PH_3) in Male ICR Mice
Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
Relaxation Mechanisms of Electronic States in CdSe/ZnSe Quantum Dots Studied by Selectively Excited Photoluminescence Measurements : Semiconductors
Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
Electrical Properties of p- and n-GaSe Doped with As and Ge
Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs (110) Substrates by Molecular Beam Epitaxy
Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
Molecular Beam Epitaxial Growth of ZnSe Films on Vicinal GaAs(110) Substrates
Annealing Behavior of Deep Trap Level in p-GaTe
Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
Electronic Structures of Porous Si Studied by Core-Level Absorption and Photoemission Spectroscopy
Charge-Balanced Heteroepitaxial Growth of GaAs on Si
Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
Diffusion of Electrically-Active Cobalt in Silicon
Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy

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