Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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Morita T
Chiba Univ. Chiba Jpn
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Ishida K
Yamagata Univ. Yamagata Jpn
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BRILLOUET Francois
On leave from CNET
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ISHIDA Koji
Optoelectronics Joint Research Laboratory
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MORITA Tetsuo
Optoelectronics Joint Research Laboratory
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MIYAUCHI Eizo
Optoelectronics Joint Research Laboratory
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TAKAMORI Takeshi
Optoelectronics Joint Research Laboratory
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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Morita T
Optoelectronics Joint Research Laboratory
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Ishida K
Taiyo Yuden Co. Ltd.
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Miyauchi E
Fujitsu Ltd. Kanagawa
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Morita T
Sumitomo Electric Inductries Ltd. Yokohama
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Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Ishida Koji
Optoelectoronic Industry And Technology Development Association:(present Address)chitose Institute O
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石田 謙司
神戸大学 大学院工学研究科
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