Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation

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Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation
Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation
Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
Reduced Damage Generation in GaAs Implanted with Focused Be Ions
Pd-Ni-Si-Be-B Liquid Metal Ion Source for Maskless Ion Implantation
Novel Method for Measuring Intensity Distribution of Focused Ion Beams
Focused Si Ion Implantation in GaAs
GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
Sn Ion Doping during GaAs MBE with Field Ion Gun
Alignment Accuracy of Focused Ion Beam Implantation
Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity
Novel Methods for Measuring Diameter of Focused Ion Beam
Positional Stability of Focused Ion Beams
GaAs P-Layer Formation by Be Ion Implantation
GaAs P-N Junction Formation by Carbon Ion Implantation : B-6: III-V DEVICE TECHNOLOGY
Zn and Si Ion Emission from Au-Zn-Si LM Ion Source
Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source
Emission Stability of Au-Si-Be LM Ion Source in Various Gas Environments
Emission Characteristics of Au-Si-Be LM Ion Source
A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System
Topographical Contrast of Secondary Electron Intensity Profiles in Focused Ion Beam Implantation : Techniques, Instrumentations and Measurement
Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching
Au-Si-Be Liquid Metal Ion Source for Maskless Ion Implantation
GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

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