Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching

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概要

• 論文の詳細を見る

• GaAs surface morphology, induced by a new reactive ion beam etching (RIBE) system using a Cl_2 gas, has been investigated with scanning electron microscopy (SEM) and laser Raman spectroscopy. Appearance of the TO phonon peak in the Raman spectrum was found to be available for recognizing the surface roughness, which strongly depends on the etching parameters such as an ion extraction voltage (V_e) and a gas pressure (P_g). Rough surface caused at the higher V_e and the lower P_g, say, 500 V and 4×10^<-4> Torr, respectively, has been made very smooth by increasing the gas pressure to, say, 2×10^<-3> Torr.

• 社団法人応用物理学会の論文
• 1983-12-20

著者

• Asakawa Kiyoshi

  Optoelectronics Joint Research Laboratory

• SUGATA Sumio

  Optoelectronics Joint Research Laboratory

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• GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System
• Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
• Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching
• GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

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