GaAs P-Layer Formation by Be Ion Implantation
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概要
- 論文の詳細を見る
A novel, nearly hazardless Be ion implantation technique has been realized by adopting BeO ceramic material as an ion source. This method made possible a continuous Be ion current of several tens of μA without noticeable contamination. High dose Be ion implantation experiments were carried out using this technique and it has been found that Be atom activation can be improved by hot implantation and subsequent lower temperature annealing.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
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Kuramoto Kazuo
Optoelectronics Joint Research Laboratory
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SUGATA Sumio
Optoelectronics Joint Research Laboratory
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Tsukada Noriaki
Optoelectronics Joint Research Laboratory
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MITA Yoh
Optoelectronics Joint Research Laboratory
関連論文
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- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
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