Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals

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概要

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• DLTS signals for midgap electron traps in LEC n-GaAs crystals were found to depend on the species of metals used for Schottky barrier contacts, aluminum and gold, and to change by annealing. SIMS analyses suggested that interfacial reaction between the contact metals and semiconductors was responsible for the change of the DLTS signals.

• 社団法人応用物理学会の論文
• 1984-05-20

著者

• NAKAJIMA Masato

  Optoelectronics Joint Research Laboratory

• Yahata Akihiro

  Optoelectronics Joint Research Laboratory

関連論文

• SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
• SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
• Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
• Striations in Undoped Semi-Insulating LEC GaAs
• Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
• Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
• GaAs P-Layer Formation by Be Ion Implantation
• Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
• Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm
• Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals

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