Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
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概要
- 論文の詳細を見る
Midgap levels in n-GaAs have been studied in detail by DLTS and capacitance transient analysis using Au and Al Schottky barrier contacts. In addition to EL2, which we call EO1 here, two other midgap levels, EO2 and EO3, were observed. The variations of EO1 and EO2 concentrations did not correlate with the distribution of the optical absorption coefficient in a wafer, while that of the EO3 concentration exhibited good correlation. This suggests that EO3 is identical or related to the optically detected midgap level.
- 社団法人応用物理学会の論文
- 1986-02-20
著者
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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YAHATA Akihiro
Research and Development Center, Toshiba Corporation
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Kikuta T
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yahata A
Research And Development Center Toshiba Corporation
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Yahata Akihiro
Optoelectronics Joint Research Laboratory
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石田 謙司
神戸大学 大学院工学研究科
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