Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm
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概要
- 論文の詳細を見る
Detailed comparison has been made of the EL2 concentration determined by DLTS and the optical absorption coefficient at 1.1 μm in LEC n-GaAs. Contrary to Martin's result, the EL2 concentration is not linearly proportional to the absorption coefficient either across wafers or between ingots grown from different melt compositions. Present results indicate that EL2 is not identical to the optically observed midgap level which has a close correlation with EPD distribution.
- 社団法人応用物理学会の論文
- 1985-04-20
著者
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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YAHATA Akihiro
Research and Development Center, Toshiba Corporation
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Kikuta T
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yahata A
Research And Development Center Toshiba Corporation
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Yahata Akihiro
Optoelectronics Joint Research Laboratory
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石田 謙司
神戸大学 大学院工学研究科
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