Reply to "Comment on 'Intracenter Transition in EL2 Observed in Photocurrent Spectrum'"
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概要
- 論文の詳細を見る
In order to examine the propriety of the claim by Lagowski et al., the simultaneous measurements of optical absorption and photocurrent were performed with undoped semi-insulating GaAs crystals. The experimental results show that both optical absorption and photocurrent spectra at low temperature are systematically identical with respect to the structures of zero-phonon-line and its phonon replicas and the intracenter transition band of EL2. Accordingly, it is concluded that the intracenter transitions in EL2 lead to generation of free carriers.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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Kikuta T
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Tsukada N
Aomori Univ. Aomori Jpn
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Tsukada Noriaki
Optoelectronics Joint Research Laboratory
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石田 謙司
神戸大学 大学院工学研究科
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