GaAs P-N Junction Formation by Carbon Ion Implantation : B-6: III-V DEVICE TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
Semura Shigeru
Optoelectronics Joint Research Laboratory
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SUGATA Sumio
Optoelectronics Joint Research Laboratory
-
Tsukada Noriaki
Optoelectronics Joint Research Laboratory
-
MITA Yoh
Optoelectronics Joint Research Laboratory
-
Hashimoto Masafumi
Optoelectronics Joint Research Laboratory
関連論文
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- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
- GaAs P-Layer Formation by Be Ion Implantation
- GaAs P-N Junction Formation by Carbon Ion Implantation : B-6: III-V DEVICE TECHNOLOGY
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