GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

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概要

• 論文の詳細を見る

• GaAs radical etching, similar to that reported with a Br_2 plasma in a reactive ion etching system, has been confirmed in a Cl_2 gas reactive ion beam etching system for the first time. Ion bombardment was completely suppressed with a sample faced opposite to the ion source. Etching rates at substrate temperatures of 300 to 400℃ were 30 Å/min to 10μm/min. The etched surface was very smooth and showed crystallographic orientation to expose the {111}_A facet. Apparent activation energy was about 500 kcal/ mol. It is expected that a damage- and contamination-free surface can be obtained by this radical etching technique.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Asakawa Kiyoshi

  Optoelectronics Joint Research Laboratory

• SUGATA Sumio

  Optoelectronics Joint Research Laboratory

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• GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System
• Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
• Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching
• GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

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