GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System

スポンサーリンク

概要

• 論文の詳細を見る

• GaAs and GaAlAs equi-rate etchings, which are difficult in the conventional reactive ion etching (RIE), have been achieved by using Cl_2 plasma flux in a new reactive ion beam etching (RIBE) system. The system has an ultra-high-vacuum (UHV) design basis and several plasma monitors for investigating an elementary etching process. The establishment of the equi-rate etching has been presumed as due to the possible elimination of particles contributing to the aluminum-oxide or other non-volatile material formation, such as C, O_2 and H_2O.

• 社団法人応用物理学会の論文
• 1983-10-20

著者

• Asakawa Kiyoshi

  Optoelectronics Joint Research Laboratory

• SUGATA Sumio

  Optoelectronics Joint Research Laboratory

関連論文

• Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
• GaAs P-Layer Formation by Be Ion Implantation
• GaAs P-N Junction Formation by Carbon Ion Implantation : B-6: III-V DEVICE TECHNOLOGY
• GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System
• Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
• Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching
• GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

スポンサーリンク