Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System

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概要

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• An optical emission spectrum was obtained from a Cl_2 ECR plasma during GaAs etching in the RIBE system. Most emissive species were identified as atomic chlorines rather than molecular chlorines, typically when the ECR plasma was excited at the 300 W microwave power and the 500 V ion extraction voltage. From the relationship between the monitored emission intensity and the sputter yield as a function of the Cl_2 gas pressure, the neutral etching species which chemically assist the ion beam etching undergone here were found to be the chlorine neutral radicals rather than the molecular species.

• 社団法人応用物理学会の論文
• 1984-03-20

著者

• Asakawa Kiyoshi

  Optoelectronics Joint Research Laboratory

• SUGATA Sumio

  Optoelectronics Joint Research Laboratory

関連論文

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• GaAs P-Layer Formation by Be Ion Implantation
• GaAs P-N Junction Formation by Carbon Ion Implantation : B-6: III-V DEVICE TECHNOLOGY
• GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System
• Optical Emission Spectrum of Cl_2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
• Investigation of GaAs Surface Morphology Induced by Cl_2 Gas Reactive Ion Beam Etching
• GaAs Radical Etching with a Cl_2 Plasma in a Reactive Ion Beam Etching System

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