Photo-Electron Paramagnetic Resonance Study of As_<Ga> Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
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概要
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The photoresponses of the antisite defect As^+_<Ga> electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting that the As_<Ga> antisite and the deep donor EL2 have identical photoionization cross sections and their concentrations exhibit the same dependence on melt stoichiometry. We have also reported the first observation of an extra singlet superimposed on the third component of the As_^+_<Ga> quadruplet in as-grown GaAs. The photoresponse of the singlet is very different from that of the As^+_<Ga< quadruplet.
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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Kikuta T
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Tsukada N
Aomori Univ. Aomori Jpn
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Tsukada Noriaki
Optoelectronics Joint Research Laboratory
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石田 謙司
神戸大学 大学院工学研究科
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