Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-07-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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NAKAJIMA Masato
Optoelectronics Joint Research Laboratory
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Nakajima M
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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Nakajima M
Toshiba Corp. Kawasaki
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Nakajima M
Mitsubishi Electric Corp. Amagasaki
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Sato Takashi
Optoelectronics Joint Research Laboratory
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Emori Haruo
Optoelectronics Joint Research Laboratory
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Ozawa Shoichi
Optoelectronics Joint Research Laboratory
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Terashima K
Nec Corp. Kanagawa Jpn
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石田 謙司
神戸大学 大学院工学研究科
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