LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
スポンサーリンク
概要
- 論文の詳細を見る
It was found that GaAs melt can be purified in-situ by our new method of bubbling distillation technique. The degree of the purification can be detected by the measurement of the electric conductivity of the melt. With this technique homogeneouse undoped semi-insulating 2 inches in diameter GaAs single crystals can be grown with high reproducibility.
- 社団法人応用物理学会の論文
- 1982-07-20
著者
-
Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
-
TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
-
Nakajima Hiroaki
Optoelectronics Joint Research Laboratory
関連論文
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Saddle-Type Bow of As-Cut GaAs Wafers
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique