Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
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概要
- 論文の詳細を見る
A systematic analysis of heat treatment experiments on a large number of melt-grown GaAs crystals with different concentrations of carbon revealed that the carbon concentration strongly affects thermal conversion. That is, the crystal with a higher concentration, larger than 1.5×10^<16> cm-<-3>, showed a greater tendency to convert during the 20 min anneal at 850℃ with a Si_3N_4 cap than the crystal with a concentration of carbon less than 1.5×10^<16> cm^<-3>. This is further evidence of outdiffusion of the main electron trap, EL2, during the anneal.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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Okada Hideo
Optoelectronics Joint-research Laboratory
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Katsumata T
Department Of Applied Chemistry Toyo University
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Obokata T
Optoelectronics Joint-research Laboratory
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KATSUMATA Tooru
Optoelectronics Joint-Research Laboratory
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KATSUMATA Tooru
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
関連論文
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- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
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- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
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- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
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