Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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Fukuda Tsuguo
Optoelectronics Joint Research Laboratory
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OBOKATA Takeshi
Optoelectronics Joint Research Laboratory
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KIKUTA Toshio
Optoelectronics Joint Research Laboratory
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TERASHIMA Kazutaka
Optoelectronics Joint Research Laboratory
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Katsumata T
Department Of Applied Chemistry Toyo University
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Matsumura T
Department Of Electronic Engineering Faculty Of Engineering Gunma University
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MATSUMURA Takao
Optoelectronics Joint Research Laboratory
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ORITO Fumio
Optoelectronics Joint Research Laboratory
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Terashima K
Nec Corp. Kanagawa Jpn
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OBOKATA Takeshi
Optoelectronics Joint-Research Laboratory
関連論文
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Large Crystals on Cu Film Surfaces Irradiated by a Glow Discharge Plasma
- Electric Resistance Changes of Metal Films Irradiated by a Weakly Ionized Plasma
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Optical Properties of Ion-Implanted Si layeres Studied by Spectroscopic Ellipsometry
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- Effect of Ambient Gas on Undoped LEC GaAs Crystal
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
- In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Effect of Carbon Concentration on Thermal Conversion in Semi-Insulating GaAs
- Influence of Melt Composition on Uniformity of Electrical Properties in Semi-Insulating LEC GaAs
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process
- Effect of Water Content of B_2O_3 Encapsulant on Semi-Insulating LEC GaAs Crystal
- Saddle-Type Bow of As-Cut GaAs Wafers
- Reply to "Comment on 'Intracenter Transition in EL2 Observed in Photocurrent Spectrum'"
- Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes
- Photo-Electron Paramagnetic Resonance Study of As_ Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
- Intracenter Transition in EL2 Observed in Photocurrent Spectrum
- Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 μm
- Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal
- Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
- Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
- Nuclear Magnetic Resonance of ^7Li in Li_2B_4O_7 Single Crystal and Glass
- Nuclear Magnetic Resonance of ^7Li in LiBO_2 Crystal
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique